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| Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25C) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 16.70.3 14.00.5 Ratings 80 60 6 8 4 1 35 2 150 -55 to +150 Unit V V V A A A W C C Solder Dip 4.0 7.50.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VBE(sat) VCE(sat) fT ton tstg tf * Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 4A VCE = 4V, IC = 4A IC = 4A, IB = 0.4A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = - 0.4A, VCC = 50V min typ max 100 100 Unit A A V 60 70 20 2.0 1.5 80 0.3 1.0 0.2 250 V V MHz s s s FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC -- Ta 40 4 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) IB=40mA TC=25C 2SD2000 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 TC=100C 0.1 0.03 0.01 0.01 0.03 25C -25C VCE(sat) -- IC Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 0 35mA Collector current IC (A) 3 30mA 25mA 20mA 2 15mA 10mA (2) (3) (4) 1 5mA 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 104 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C hFE -- IC 1000 VCE=4V fT -- IC VCE=12V f=10MHz TC=25C 100 Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 103 TC=100C 102 Transition frequency fT (MHz) 3 10 25C -25C 10 10 1 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 1 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C ICP IC t=1ms DC Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) Collector current IC (A) 8 1000 10 10 3 1 0.3 0.1 0.03 tstg 1 ton 0.1 tf 100 10 1 1 3 10 30 100 300 1000 0.01 0 1 2 3 4 5 6 7 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink 2SD2000 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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